PART |
Description |
Maker |
E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器(J3 Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56 Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56 Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64 (TE28FxxxJ3C) Strata Flash Memory Strata Flash Memory / 256 Mbit
|
Intel, Corp. Intel Corp. http:// Intel Corporation
|
AM29F080B-75SC |
Flash Memory IC; Memory Size:8Mbit; Memory Configuration:1M x 8; Package/Case:44-SOIC; Supply Voltage:5V; Access Time, Tacc:75ns; Mounting Type:Surface Mount 1M X 8 FLASH 5V PROM, 70 ns, PDSO44
|
Spansion, Inc.
|
W39V040A W39V040AQ W39V040AP |
3.3-Volt Flash NVM > Flash> FWH/LPC Flash Memory 512K 】 8 CMOS FLASH MEMORY WITH LPC INTERFACE
|
Winbond Electronics WINBOND[Winbond]
|
CAT28F512HI-12T CAT28F512HI-15T CAT28F512HI-90T CA |
512K-Bit CMOS Flash Memory 512 kb CMOS Flash Memory 64K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
ON Semiconductor
|
UM6264 UM6264M-10 UM6264M-10L UM6264-12 UM6264-10 |
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:64-BGA; Memory Configuration:64K x 8; Memory Size:32MB; NOR Flash Type:Page Mode Access 8K x 8 CMOS SRAM
|
United Microelectronics Corporation ETC UMC[UMC Corporation]
|
MB84VA2005-10 MB84VA20 MB84VA2004 MB84VA2004-10 MB |
MCP (Multi-Chip Package) FLASH MEMORY & SRAM 8M (x 8) FLASH MEMORY & 1M (x 8) STATIC RAM
|
Fujitsu Microelectronics FUJITSU[Fujitsu Media Devices Limited]
|
HY29LV320BF-80 HY29LV320BF-80I HY29LV320BT-12I HY2 |
32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 80 ns, PDSO48 32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 70 ns, PDSO48 122 x 32 pixel format, LED Backlight available 2M X 16 FLASH 3V PROM, 120 ns, PBGA63 32 Mbit (2M x 16) Low Voltage Flash Memory 2M X 16 FLASH 3V PROM, 90 ns, PBGA63 150 x 32 pixel format, LED Backlight available ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84%
|
http:// Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
M5M29KE131BVP |
Memory>NOR type Flash Memory 134,217,728-BIT (16,777,216-WORD BY 8-BIT / 8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY Stacked-uMCP (micro Multi Chip Package)
|
Renesas Electronics Corporation
|
AM29LV800DB-70EF AM29LV800DB-90EF AM29LV800DB-70WC |
Flash Memory IC; Memory Size:8Mbit; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70nS; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 3V PROM, 70 ns, PDSO48 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 512K X 16 FLASH 3V PROM, 70 ns, PBGA48 512K X 16 FLASH 3V PROM, 90 ns, PBGA48 512K X 16 FLASH 3V PROM, 120 ns, PDSO48 512K X 16 FLASH 3V PROM, 120 ns, PDSO44 512K X 16 FLASH 3V PROM, 90 ns, PDSO44
|
Spansion, Inc. SPANSION LLC
|
MB84VA2000-10 MB84VA2001-10 MB84VA2000 |
(MB84VA2000 / MB84VA2001) 8M (X 8) FLASH MEMORY & 2M (X 8) STATIC RAM 8M (X 8) FLASH MEMORY & 2M (X 8) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA48
|
Fujitsu Media Devices Fujitsu, Ltd. Fujitsu Component Limited.
|
MB84VD22181EH-90-PBS MB84VD22182EH-90-PBS MB84VD22 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM 32M的(x 8/x16)闪 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM SPECIALTY MEMORY CIRCUIT, PBGA71 TRIMMER, 15 TURN 20K CONN HEADER 12POS DL PCB 30GOLD 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU LTD Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|